The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Dec. 18, 2012
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Ulsan College Industry Cooperation, Ulsan, KR;
Sang Youn Han, Seoul, KR;
Cheol Kyu Kim, Seoul, KR;
Jun Ho Song, Seongnam-si, KR;
Sung Hoon Yang, Seoul, KR;
Kyung Tea Park, Seoul, KR;
Seung Mi Seo, Hwaseong-si, KR;
Suk Won Jung, Goyang-si, KR;
Do Young Kim, Ulsan, KR;
Sun Jo Kim, Seoul, KR;
Hyung Jun Kim, Seoul, KR;
Abstract
A display device includes: a first substrate; a photo transistor on the first substrate; and a switching transistor connected to the photo transistor. The photo transistor includes a light blocking film on the first substrate, a first gate electrode on the light blocking film and in contact with the light blocking film, a first semiconductor layer on the first gate electrode and overlapping the light blocking film, and a first source electrode and a first drain electrode on the first semiconductor layer. The switching transistor includes a second gate electrode on the first substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are at a same layer of the display device, and each includes crystalline silicon germanium.