The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Jan. 30, 2013
Dow Global Technologies Llc, Midland, MI (US);
California Institute of Technology, Pasadena, CA (US);
Gregory M. Kimball, Campbell, CA (US);
Harry A. Atwater, South Pasadena, CA (US);
Nathan S. Lewis, La Canada, CA (US);
Jeffrey P. Bosco, Pasadena, CA (US);
Rebekah K. Feist, Midland, MI (US);
Dow Global Technologies LLC, Midland, MI (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication.