The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Jun. 18, 2012
Akio Yamamoto, Higashiomi, JP;
Seiji Oguri, Higashiomi, JP;
Hiromitsu Ogawa, Higashiomi, JP;
Aki Kitabayashi, Higashiomi, JP;
Shinichi Abe, Uji, JP;
Kazumasa Umesato, Omihachiman, JP;
Norihiko Matsushima, Yasu, JP;
Keizo Takeda, Omihachiman, JP;
Manabu Kyuzo, Higashiomi, JP;
Ken Nishiura, Shizuoka, JP;
Atsuo Hatate, Nara, JP;
Akio Yamamoto, Higashiomi, JP;
Seiji Oguri, Higashiomi, JP;
Hiromitsu Ogawa, Higashiomi, JP;
Aki Kitabayashi, Higashiomi, JP;
Shinichi Abe, Uji, JP;
Kazumasa Umesato, Omihachiman, JP;
Norihiko Matsushima, Yasu, JP;
Keizo Takeda, Omihachiman, JP;
Manabu Kyuzo, Higashiomi, JP;
Ken Nishiura, Shizuoka, JP;
Atsuo Hatate, Nara, JP;
KYOCERA Corporation, Kyoto, JP;
Abstract
Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.