The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Oct. 24, 2014
Applicant:
Robert Bosch Gmbh, Stuttgart, DE;
Inventors:
Ning Qu, Reutlingen, DE;
Alfred Goerlach, Kusterdingen, DE;
Assignee:
ROBERT BOSCH GMBH, Stuttgart, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 29/0615 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/47 (2013.01); H01L 29/475 (2013.01); H01L 29/66136 (2013.01); H01L 29/66143 (2013.01); H01L 29/8611 (2013.01);
Abstract
A semiconductor system of a Schottky diode is described having an integrated PN diode as a clamping element, which is suitable in particular as a Zener diode having a breakdown voltage of approximately 20 V for use in motor vehicle generator systems. The semiconductor system of the Schottky diode includes a combination of a Schottky diode and a PN diode. The breakdown voltage of the PN diode is much lower than the breakdown voltage of the Schottky diode, the semiconductor system being able to be operated using high currents during breakdown operation.