The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Mar. 31, 2014
Shindengen Electric Manufacturing Co., Ltd., Chiyoda-ku, Tokyo, JP;
Nobuki Miyakoshi, Hanno, JP;
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;
Abstract
In a semiconductor device provided with a MOSFET part and a gate pad part, the gate pad part includes: a low resistance semiconductor layer; a drift layer; a poly-silicon layer constituting a conductor layer and a gate pad electrode formed above the drift layer over the whole area of the gate pad part with a field insulation layer interposed therebetween; and a gate oscillation suppressing structure, wherein the gate oscillation suppressing structure includes a p-type diffusion region which is disposed along an outer peripheral portion of the gate pad part and is electrically connected with the a source electrode layer, and a p-type diffusion region in a floating state and the p-type impurity non-diffusion regions which are alternately formed in the region surrounded by the p-type diffusion region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile