The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Aug. 20, 2014
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/28114 (2013.01); H01L 29/00 (2013.01); H01L 29/41766 (2013.01); H01L 29/66621 (2013.01); H01L 29/78 (2013.01); H01L 29/7825 (2013.01);
Abstract
A transistor device may include a substrate that has a recess and a substrate surface, wherein the recess is recessed with respect to the substrate surface. The transistor device may further include a source and a drain that overlap the substrate. The transistor device may further include a gate structure that has a first gate structure portion and a second gate structure portion, wherein the first gate structure portion is positioned inside the recess, and wherein the second gate structure portion is connected to the first gate structure and is positioned outside the first recess.