The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Dec. 12, 2012
Applicant:
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Inventors:
Yoshitaka Kadowaki, Tokyo, JP;
Tatsunori Toyota, Tokyo, JP;
Assignee:
DOWA ELECTRONICS MATERIALS CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 33/20 (2010.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/306 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 29/45 (2006.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0254 (2013.01); H01L 21/28 (2013.01); H01L 21/30617 (2013.01); H01L 21/30621 (2013.01); H01L 29/045 (2013.01); H01L 29/0657 (2013.01); H01L 29/452 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/40 (2013.01);
Abstract
Provided are a III nitride semiconductor device which can be operated at a lower voltage can be provided, in which device a good ohmic contact is achieved between the (000-1) plane side of the III nitride semiconductor layer and the electrode and a method of producing the III nitride semiconductor device. A III nitride semiconductor device of the present invention includes a plurality of protrusions rounded like domes in a predetermined region on the (000-1) plane side of the III nitride semiconductor layer; and an electrode on the upper surface of the predetermined region.