The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
May. 08, 2014
Applicant:
Samsung Electro-mechanics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Jae Hoon Park, Suwon-Si, KR;
In Hyuk Song, Suwon-Si, KR;
Chang Su Jang, Suwon-Si, KR;
Kee Ju Um, Suwon-Si, KR;
Assignee:
SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/049 (2013.01); H01L 29/4916 (2013.01); H01L 29/518 (2013.01); H01L 29/78 (2013.01);
Abstract
A method of manufacturing a semiconductor device may include: preparing a substrate formed of SiC; depositing crystalline or amorphous silicon (Si) on one surface of the substrate to form a first semiconductor layer; and performing a heat treatment under a nitrogen atmosphere to form a second semiconductor layer formed of SiCN between the substrate and the first semiconductor layer.