The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Jun. 26, 2012
Applicants:
Masanobu Kitada, Omihachiman, JP;
Tomofumi Honjo, Higashiomi, JP;
Inventors:
Masanobu Kitada, Omihachiman, JP;
Tomofumi Honjo, Higashiomi, JP;
Assignee:
Kyocera Corporation, Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/58 (2006.01); H01L 29/02 (2006.01); H01L 21/762 (2006.01); H01L 21/86 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/02 (2013.01); H01L 21/76256 (2013.01); H01L 21/76262 (2013.01); H01L 21/86 (2013.01); H01L 21/02263 (2013.01); H01L 21/02304 (2013.01); H01L 21/2007 (2013.01);
Abstract
[Problem] To provide a composite substrate which includes a silicon substrate having few lattice defects. [Solution] A composite substrate () that comprises a first substrate (), which is constituted of a semiconductor material, a second substrate (), which is constituted of an insulating material, and an oxide layer () and a semiconducting epitaxial layer () which have been disposed between the substrates () and () in this order from the second substrate () side, the oxide layer () having oxygen atoms arranged on the side thereof which faces the epitaxial layer ().