The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Nov. 04, 2013
Sri International, Menlo Park, NJ (US);
James Robert Janesick, Huntington Beach, CA (US);
SRI International, Menlo Park, CA (US);
Abstract
A CMOS multi-pinned pixel having very low dark current and very high charge transfer performance over that of conventional CMOS pixels is disclosed. The CMOS pixel includes epitaxial silicon and at least one transfer gate formed upon the epitaxial silicon. A pinned-photodiode is formed in the epitaxial silicon. A multi-pinned (MP) implant layer is implanted in the epitaxial silicon at least partially extending across the pinned-photodiode and substantially underlying the at least one transfer gate of the CMOS pixel to promote dark current passivation during an accumulation state and promote charge transfer during a transfer state.