The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
May. 15, 2014
Jung-hwan OH, Yongin-si, KR;
Hyun-jun Kim, Seoul, KR;
Jong-bom Seo, Seoul, KR;
Ki-vin Im, Seongnam-si, KR;
Han-jin Lim, Seoul, KR;
Jung-Hwan Oh, Yongin-si, KR;
Hyun-Jun Kim, Seoul, KR;
Jong-Bom Seo, Seoul, KR;
Ki-Vin Im, Seongnam-si, KR;
Han-Jin Lim, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
Provided are a semiconductor device and a fabricating method thereof. The semiconductor device includes a storage electrode having a cylinder shape, a dielectric film formed on the storage electrode, and a plate electrode formed on the dielectric film, wherein the plate electrode includes a first semiconductor compound layer and a second semiconductor compound layer sequentially stacked one on the other, and the first semiconductor compound layer has a crystallinity different from that of the second semiconductor compound layer.