The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2016

Filed:

Jul. 09, 2014
Applicants:

Rouying Zhan, Gilbert, AZ (US);

Chai Ean Gill, Chandler, AZ (US);

Inventors:

Rouying Zhan, Gilbert, AZ (US);

Chai Ean Gill, Chandler, AZ (US);

Assignee:

FREESCALE SEMICONDUCTOR INC., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 27/02 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 21/8222 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0259 (2013.01); H01L 21/26513 (2013.01); H01L 21/8222 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01);
Abstract

ESD protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a first base well region having a first conductivity type, a collector region of the opposite conductivity type, and a second base well region having a dopant concentration greater than the first base well region, and a portion of the second base well region is disposed between the first base well region and the collector region. A third base well region with a different dopant concentration is disposed between the collector region and the second base well region. At least a portion of the first base well region is disposed between a base contact region and an emitter region within the second base well region.


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