The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Jan. 10, 2013
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Samsung Austin Semiconductor, L.p., Austin, TX (US);
Keith Quoc Lao, Austin, TX (US);
Samsung Austin Semiconductor, L.P., Austin, TX (US);
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor structure is formed to include a non-conductive layer with at least one metal line, a first dielectric layer, a first stop layer, a second dielectric layer, a second stop layer, a third stop layer and a fourth stop layer. A first photoresist layer is formed over the upper stop layer to develop at least one via pattern. The structure is selectively etched to form the via pattern in the third stop layer through the fourth stop layer. The first photoresist layer is then removed. A second photoresist layer is formed over the upper stop layer to develop a plurality of trench patterns, each of the trench pattern comprising a via-trench portion in which the trench pattern is formed above the via pattern, and a trench portion that is remaining part of the trench pattern.