The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Jun. 19, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Hwansoo Suh, Gunpo-si, KR;
Insu Jeon, Incheon, KR;
Young-jae Song, Suwon-si, KR;
Qinke Wu, Suwon-si, KR;
Seong-jun Jung, Suwon-si, KR;
Assignees:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Research & Business Foundation Sungkyunkwan University, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02527 (2013.01); H01L 21/0262 (2013.01); H01L 21/02425 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02664 (2013.01);
Abstract
According to example embodiments, a method of forming a multilayer graphene structure includes forming a sacrificial layer on the growth substrate, growing a first graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, and growing at least one more graphene layer on the growth substrate. The growing at least one more graphene layer includes removing at least a part of the sacrificial layer.