The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2016

Filed:

Feb. 26, 2014
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Hiroki Nishioka, Chino, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03B 21/20 (2006.01); H01L 33/00 (2010.01); H01L 33/08 (2010.01); G03B 33/06 (2006.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
G03B 21/2033 (2013.01); G03B 21/208 (2013.01); G03B 21/2013 (2013.01); G03B 33/06 (2013.01); H01L 33/0045 (2013.01); H01L 33/08 (2013.01); H01L 33/10 (2013.01);
Abstract

A semiconductor light-emitting device includes: a stacked structure including a light-emitting layer, a first cladding layer, and a second cladding layer; a first electrode electrically connected with the first cladding layer; a second electrode electrically connected with the second cladding layer; and a third electrode electrically connected with the second cladding layer. The stacked structure includes an optical waveguide. The optical waveguide includes a straight waveguide portion extending from a light exiting portion along a straight line inclined to a normal of a front edge surface of the stacked structure, and a curved waveguide portion including a curved waveguide having a shape with a curvature. The density of current injected into the straight waveguide portion is higher than that of current injected into the curved waveguide portion.


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