The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Aug. 15, 2013
Freescale Semiconductor, Inc., Austin, TX (US);
Chad S. Dawson, Queen Creek, AZ (US);
Peter T. Jones, Scottsdale, AZ (US);
Bruno J. Debeurre, Phoenix, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A test structure includes two capacitor structures, wherein one of the capacitor structures has conductor plates spaced apart by a cavity, and the other capacitor structure does not include a cavity. Methodology entails forming the test structure and a pressure sensor on the same substrate using the same fabrication process techniques. Methodology for estimating the sensitivity of the pressure sensor includes detecting capacitances for each of the two capacitor structures and determining a ratio of the capacitances. A critical dimension of the cavity in one of the capacitor structures is estimated using the ratio, and the sensitivity of the pressure sensor is estimated using the critical dimension.