The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Dec. 06, 2013
Freescale Semiconductor, Inc., Austin, TX (US);
Chad S. Dawson, Queen Creek, AZ (US);
Peter T. Jones, Scottsdale, AZ (US);
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Abstract
A MEMS pressure sensor () includes a sense cell (), a test cell (), and a seal structure (). The test cell includes a test cavity (), and the seal structure () is in communication with the test cavity, wherein the seal structure is configured to be breached to change an initial cavity pressure () within the test cavity () to ambient pressure (). Calibration methodology () entails obtaining () a test signal () from the test cell prior to breaching the seal structure, and obtaining () another test signal () after the seal structure is breached. The test signals are used to calculate a sensitivity () of the test cell, the calculated sensitivity is used to estimate the sensitivity () of the sense cell, and the estimated sensitivity () can be used to calibrate the sense cell.