The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Feb. 27, 2014
Lam Research Corporation, Fremont, CA (US);
Kevin Madrigal, Santa Cruz, CA (US);
Frances Katherine Zelaya, Sunnyvale, CA (US);
Hsiang-Yun Lee, Cupertino, CA (US);
Kaihan Abidi Ashtiani, Cupertino, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A semiconductor processing gas flow manifold is provided that allows for the gas flow characteristics of the manifold gas flow paths to be individually adjusted outside of a semiconductor processing chamber. The gas flow manifold may be connected to a process gas dispersion device inside the semiconductor processing chamber. The process gas dispersion device may have multiple gas flow channels, each channel separately connected to a manifold gas flow path and targeted at a region on the semiconductor wafer. The adjustment of the individual manifold gas flow paths may vary the amount of process gas dispersed through each process gas dispersion gas flow channel onto the corresponding region of the semiconductor wafer.