The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Sep. 24, 2012
Hiroshi Yamada, Kanagawa, JP;
Hideyuki Funaki, Tokyo, JP;
Kazuhiro Suzuki, Tokyo, JP;
Kazuhiko Itaya, Kanagawa, JP;
Armon Mahajerin, Berkeley, CA (US);
Kevin Limkrailassiri, Newhall, CA (US);
Liwei Lin, San Ramon, CA (US);
Hiroshi Yamada, Kanagawa, JP;
Hideyuki Funaki, Tokyo, JP;
Kazuhiro Suzuki, Tokyo, JP;
Kazuhiko Itaya, Kanagawa, JP;
Armon Mahajerin, Berkeley, CA (US);
Kevin Limkrailassiri, Newhall, CA (US);
Liwei Lin, San Ramon, CA (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
The Regents of the University of California, Oakland, CA (US);
Abstract
After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.