The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Jun. 03, 2013
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Jens Mueller, Regensburg, DE;

Adrian Stefan Avramescu, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/042 (2006.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01S 5/223 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0425 (2013.01); H01S 5/2009 (2013.01); H01S 5/2018 (2013.01); H01S 5/22 (2013.01); H01S 5/221 (2013.01); H01S 5/2222 (2013.01); H01S 5/2231 (2013.01); H01S 5/2232 (2013.01); H01S 5/34333 (2013.01); H01S 5/2206 (2013.01); H01S 2301/166 (2013.01); H01S 2301/176 (2013.01);
Abstract

In at least one embodiment, the bar laser () has a semiconductor layer sequence () with an active zone (). A waveguide () with a defined width (B) is formed as an elevation from the semiconductor layer sequence (). A contact metallization () is applied to an upper side () of the waveguide () facing away from the active zone (). A current flow layer () is in direct contact with the contact metallization (). The contact metallization () is electrically connected via the current flow layer (). A current flow width (C) of the active zone () and/or the waveguide () is less than the width (B) of the waveguide ().


Find Patent Forward Citations

Loading…