The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Feb. 27, 2013
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Duk Il Suh, Ansan-si, KR;

Kyoung Wan Kim, Ansan-si, KR;

Yeo Jin Yoon, Ansan-si, KR;

Ji Hye Kim, Ansan-si, KR;

Assignee:

SEOUL VIOSYS CO., LTD., Ansan-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/24 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/10 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 33/42 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0058 (2013.01);
Abstract

Disclosed are a light emitting diode and a method of fabricating the same. The light emitting diode includes a GaN substrate having a plurality of through-holes; a GaN-based semiconductor stack structure placed on the substrate and including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; and a first electrode electrically connected to the first conductive-type semiconductor layer via the through-holes. The light emitting diode can reduce crystal defects and prevent reduction in light emitting area.


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