The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Apr. 19, 2013
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Dong Wook Kim, Seoul, KR;

June O Song, Seoul, KR;

Rak Jun Choi, Seoul, KR;

Jeong Tak Oh, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/04 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/04 (2013.01); H01L 33/12 (2013.01); H01L 33/145 (2013.01); H01L 33/32 (2013.01); H01L 33/06 (2013.01); H01L 2224/48091 (2013.01);
Abstract

Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, an electron blocking layer on the active layer, and a second conductive semiconductor layer on the electron blocking layer. The electron blocking layer includes a first electron blocking layer and an interrupted diffusion layer on the first electron blocking layer.


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