The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Dec. 08, 2014
Applicant:
Canon Kabushiki Kaisha, Ohta-ku, Tokyo, JP;
Inventor:
Toshihiko Ouchi, Sagamihara, JP;
Assignee:
CANON KABUSHIKI KAISHA, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0256 (2006.01); H01L 31/09 (2006.01); G01J 3/02 (2006.01); G01J 3/42 (2006.01); G01N 21/3581 (2014.01); H01L 31/0224 (2006.01); H01L 31/0232 (2014.01); H01L 31/101 (2006.01); H01L 33/36 (2010.01);
U.S. Cl.
CPC ...
H01L 31/09 (2013.01); G01J 3/0256 (2013.01); G01J 3/42 (2013.01); G01N 21/3581 (2013.01); H01L 31/0232 (2013.01); H01L 31/022408 (2013.01); H01L 31/101 (2013.01); H01L 33/36 (2013.01);
Abstract
A method of manufacturing photo-semiconductor device that has a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of the second substrate and the electrodes of the photoconductive semiconductor film being held in contact with each other.