The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Aug. 06, 2014
Wistron Corporation, New Taipei, TW;
Wistron Corporation, New Taipei, TW;
Abstract
A transistor structure including a gate, an insulation layer, a patterned semiconductor layer, a source, a drain and a light absorption layer and a manufacturing method thereof are provided. The gate is disposed on a substrate. An area of the gate overlaps an area of the patterned semiconductor layer. The insulation layer is disposed between the gate and the patterned semiconductor layer. The source and the drain are separated from each other and in contact with the patterned semiconductor layer. The patterned semiconductor layer is disposed between the light absorption layer and the substrate. An area of the light absorption layer overlaps an area of the patterned semiconductor layer. An absorption spectrum of the light absorption layer overlaps an absorption spectrum of the patterned semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile