The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Dec. 05, 2014
National Applied Research Laboratories, Taipei, TW;
Chih-Chao Yang, Hsinchu, TW;
Jia-Min Shieh, Hsinchu, TW;
Wen-Hsien Huang, Hsinchu, TW;
Tung-Ying Hsieh, Hsinchu, TW;
Chang-Hong Shen, Hsinchu, TW;
Szu-Hung Chen, Hsinchu, TW;
NATIONAL APPLIED RESEARCH LABORATORIES, Taipei, TW;
Abstract
A transistor device structure includes a substrate, a first transistor layer and a second transistor layer. The second transistor layer is disposed between the substrate and the first transistor layer. The first transistor layer includes an insulating structure and a first transistor unit. The insulating structure is disposed on the second transistor layer and has a protruding portion. The first transistor unit includes a gate structure, a source/drain structure, an embedded source/drain structure and a channel. The source/drain structure is disposed beside the gate structure and over the insulating structure. The embedded source/drain structure is disposed underneath the source/drain structure and in the insulating structure. The channel is defined between the protruding portion and the gate structure.