The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9281252 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 08, 2016

Filed:

Oct. 24, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Alexander Würfel, Dresden, DE;

Moritz Andreas Meyer, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/66 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); C23C 16/52 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01L 21/02274 (2013.01); H01L 21/67092 (2013.01); H01L 21/67288 (2013.01); H01L 21/687 (2013.01); H01L 22/12 (2013.01);
Abstract

A method includes providing a semiconductor structure. An external mechanical stress is applied to the semiconductor structure. One or more semiconductor manufacturing processes are performed while the external mechanical stress is applied to the semiconductor structure. The one or more semiconductor manufacturing processes provide one or more material layers having an intrinsic stress at the semiconductor structure. After performing the one or more semiconductor manufacturing processes, the external mechanical stress is removed from the semiconductor structure. The removal of the external mechanical stress at least partially relaxes the intrinsic stress of the one or more material layers.


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