The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Jan. 28, 2014
Sung-min Kim, Incheon, KR;
Ji-su Kang, Seoul, KR;
Dong-kyu Lee, Hwaseong-si, KR;
Dong-ho Cha, Seongnam-si, KR;
Sung-Min Kim, Incheon, KR;
Ji-Su Kang, Seoul, KR;
Dong-Kyu Lee, Hwaseong-si, KR;
Dong-Ho Cha, Seongnam-si, KR;
Abstract
A method of forming a semiconductor structure can include forming a photolithography mask on a silicon fin having a hard mask layer thereon extending in a first direction. A trench can be formed through the hard mask layer into the silicon fin using the photolithography mask, where the trench extends in a second direction to separate the silicon fin into first and second fin structures extending end-to-end in the first direction. A portion of the trench formed by the hard mask layer can be widened relative to a lower portion of the trench defined by the first and second fin structures.