The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Oct. 12, 2012
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Sungho Jin, San Diego, CA (US);

Young Oh, San Diego, CA (US);

Chulmin Choi, San Diego, CA (US);

Dae-Hoon Hong, Fremont, CA (US);

Tae Kyoung Kim, La Jolla, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/306 (2006.01); B28D 5/00 (2006.01); H01L 21/67 (2006.01); B82Y 30/00 (2011.01); B81C 1/00 (2006.01); H01L 31/0352 (2006.01); H01L 31/0236 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); A61M 37/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30608 (2013.01); B28D 5/00 (2013.01); B81C 1/00111 (2013.01); B81C 1/00515 (2013.01); B82Y 30/00 (2013.01); H01L 21/30604 (2013.01); H01L 21/67086 (2013.01); H01L 31/02366 (2013.01); H01L 31/03529 (2013.01); H01L 31/035209 (2013.01); H01L 31/035281 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); A61M 2037/0046 (2013.01); A61M 2037/0053 (2013.01); B81B 2201/055 (2013.01); Y02E 10/547 (2013.01);
Abstract

Methods, systems, and devices are described for slicing and shaping materials using magnetically guided chemical etching. In one aspect, a method includes forming a pattern on a substrate by a mask, depositing a catalytic etcher layer on the patterned substrate, a magnetic guide layer on the etcher layer, and a protection layer on the guide layer, etching the substrate by applying an etching solution to the substrate that chemically reacts with the etcher layer and etches material from the substrate at exposed regions not covered by the mask, steering the composite etching structure into the substrate during the etching by an applied magnetic field that creates a force on the guide layer to direct the etching, in which the steering defines the shape of the sliced regions of the etched substrate, and removing the etched material, the mask, and the composite etching structure to produce a sliced material structure.


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