The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Mar. 05, 2014
Applicants:
Kang-lie Chiang, San Jose, CA (US);
Olivier Luere, Sunnyvale, CA (US);
Jinhan Choi, San Ramon, CA (US);
Inventors:
Kang-lie Chiang, San Jose, CA (US);
Olivier Luere, Sunnyvale, CA (US);
Jinhan Choi, San Ramon, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); H01L 21/3065 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01);
Abstract
Local and global reduction of critical dimension (CD) asymmetry in etch processing is described. In an example, a method of etching a wafer of to form a plurality of staircase structures with reduced local and global asymmetry involves forming a photoresist layer on a plurality of micron-scale semiconductor structures. The photoresist layer is then trimmed with a high pressure and pulsed plasma etch process performed in a reverse MESA mode.