The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Oct. 26, 2012
Applicant:
Moo Seong Kim, Seoul, KR;
Inventor:
Moo Seong Kim, Seoul, KR;
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/02 (2006.01); C30B 25/16 (2006.01); C30B 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02694 (2013.01); C30B 25/16 (2013.01); C30B 29/06 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02499 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 29/1608 (2013.01); H01L 29/34 (2013.01);
Abstract
Disclosed is a method of manufacturing a thin film, the method including: growing an epitaxial layer on a surface of a wafer at a growth temperature, wherein the growing of the epitaxial layer comprises controlling a defect present on a surface of the wafer. Also, disclosed is a wafer including: a substrate; and an epitaxial layer located on the substrate, wherein a basal dislocation density of the epitaxial layer is equal to or less than 1/cm2.