The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Nov. 23, 2011
Applicants:
Mongsup Lee, Seoul, KR;
Inseak Hwang, Suwon-Si, KR;
Inventors:
Mongsup Lee, Seoul, KR;
Inseak Hwang, Suwon-Si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/768 (2006.01); H01L 27/108 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02063 (2013.01); H01L 21/3065 (2013.01); H01L 21/76805 (2013.01); H01L 21/76814 (2013.01); H01L 27/10855 (2013.01); H01L 27/10888 (2013.01);
Abstract
Provided is a method of fabricating a semiconductor device. The method includes: preparing a substrate with an etching target, and etching the etching target through a plasma-free etching process that uses an etching gas including one of interhalogen compound, F, XeFand combinations thereof.