The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Mar. 15, 2013
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Katsumi Abe, Kanagawa-ken, JP;
Masahiro Yoshihara, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/28 (2006.01); G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 11/5642 (2013.01); G11C 16/24 (2013.01); G11C 16/3404 (2013.01);
Abstract
In general, according to one embodiment, a semiconductor memory device includes a first transistor, a plurality of memory cells and a controller. One end of the first transistor is electrically connected to a first power supply. The plurality of memory cells are electrically connected between other end of the first transistor and a second power supply. The controller is configured to apply a first voltage to a gate of the first transistor when reading data from a selected memory cell. The controller is configured to make the first voltage progressively-increasing.