The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Dec. 17, 2014
Applicants:

Perry H. Pelley, Austin, TX (US);

Frank K. Baker, Jr., Austin, TX (US);

Ravindraraj Ramaraju, Round Rock, TX (US);

Inventors:

Perry H. Pelley, Austin, TX (US);

Frank K. Baker, Jr., Austin, TX (US);

Ravindraraj Ramaraju, Round Rock, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/16 (2006.01); G11C 11/24 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 13/0002 (2013.01); G11C 13/0004 (2013.01); G11C 11/24 (2013.01);
Abstract

A memory cell includes a bi-directional resistive memory element, a first transistor, and a capacitive element. The bi-directional resistive memory element has a first terminal directly connected to a first power rail and a second terminal coupled to an internal node. The first transistor has a control electrode coupled to the internal node, a first current electrode coupled to a first bitline, and a second current electrode coupled to one of the first power rail, a second power rail, or a read wordline. The capacitive element includes a first terminal coupled to the internal node and a second terminal coupled to the read wordline.


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