The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Mar. 15, 2013
Applicant:

Lapis Semiconductor Co., Ltd., Yokohama, JP;

Inventor:

Masaru Sekiguchi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/416 (2006.01); G01R 31/36 (2006.01); H01M 10/48 (2006.01); B60L 3/00 (2006.01); B60L 3/12 (2006.01); B60L 11/18 (2006.01);
U.S. Cl.
CPC ...
G01R 31/3644 (2013.01); B60L 3/0046 (2013.01); B60L 3/12 (2013.01); B60L 11/1859 (2013.01); B60L 11/1864 (2013.01); G01R 31/3658 (2013.01); H01M 10/482 (2013.01); B60L 2240/547 (2013.01); H01M 2220/20 (2013.01); Y02T 10/7005 (2013.01); Y02T 10/7061 (2013.01); Y02T 90/16 (2013.01);
Abstract

A battery monitoring system including: plural battery cell sets; and semiconductor devices, wherein: each of the semiconductor devices includes a measuring section, a high side communication section that is supplied with a drive voltage in a first voltage range, and, when a semiconductor device is present at a higher position that operates at a higher operating voltage than the operating voltage of the semiconductor device itself when measuring a battery cell set on the high side of the battery cell set measured by the semiconductor device itself, can perform communication with the high side semiconductor device, a low side communication section, and a communication level converter; the semiconductor device at the highest stage further includes a signal level determination section; and the first voltage range of the highest stage is set to a specific voltage range narrower than the first voltage range of another of the semiconductor devices.


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