The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Oct. 01, 2010
Applicants:

Kazushi Hayashi, Kobe, JP;

Hiroyuki Takamatsu, Kobe, JP;

Yoshito Fukumoto, Kobe, JP;

Shingo Sumie, Kobe, JP;

Inventors:

Kazushi Hayashi, Kobe, JP;

Hiroyuki Takamatsu, Kobe, JP;

Yoshito Fukumoto, Kobe, JP;

Shingo Sumie, Kobe, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/31 (2006.01); G01N 21/3563 (2014.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01N 21/3151 (2013.01); G01N 21/31 (2013.01); H01L 22/14 (2013.01); G01N 2021/3568 (2013.01); H01L 2924/0002 (2013.01);
Abstract

In a semiconductor carrier lifetime measuring apparatus Aof the present invention, at least two types of light having mutually different wavelengths are irradiated onto a semiconductor X to be measured, a predetermined measurement wave is irradiated onto the semiconductor X to be measured, a reflected wave of the measurement wave that has been reflected by the semiconductor X to be measured or a transmitted wave of the measurement wave that has transmitted through the semiconductor X to be measured is detected, and the carrier lifetime in the semiconductor X to be measured is obtained based on the detection results so as to minimize the error. Accordingly, the semiconductor carrier lifetime measuring apparatus Aconfigured as described above can more accurately measure the carrier lifetime.


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