The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Mar. 27, 2012
Applicants:

Horacio Dante Espinosa, Winnetka, IL (US);

Rodrigo A. Bernal Montoya, Evanston, IL (US);

Inventors:

Horacio Dante Espinosa, Winnetka, IL (US);

Rodrigo A. Bernal Montoya, Evanston, IL (US);

Assignee:

Northwestern University, Evanston, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 3/08 (2006.01);
U.S. Cl.
CPC ...
G01N 3/08 (2013.01); G01N 2203/005 (2013.01); G01N 2203/0286 (2013.01);
Abstract

A microelectromechanical device for electromechanical testing a specimen having a nano-scale dimension is formed on a multi-layered semiconductor substrate (chip) and includes an electrothermal or electrostatic actuator for applying a displacement load (force) to the specimen, a load sensor for sensing the load (force) experienced by the specimen. The specimen is disposed between first and second movable shuttles of the actuator and load sensor, which shuttles comprise electrically insulating layers so as to electrically isolate the shuttles and specimen from the actuator and the load sensor on the substrate. A four-terminal Kelvin array is provided to provide specimen electrical characterization measurements and includes first and second outer terminals connected to a current source and to opposite end locations of the specimen and first and second inner terminals connected to a high input impedance voltage meter and to the specimen at other locations between the first and second outer terminals.


Find Patent Forward Citations

Loading…