The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Nov. 09, 2006
Mark Philip D'evelyn, Niskayuna, NY (US);
Kristi Jean Narang, Voorheesville, NY (US);
Dong-sil Park, Niskayuna, NY (US);
Huicong Hong, Niskayuna, NY (US);
Xian-an Cao, Morgantown, WV (US);
Larry Qiang Zeng, Strongsville, OH (US);
Mark Philip D'Evelyn, Niskayuna, NY (US);
Kristi Jean Narang, Voorheesville, NY (US);
Dong-Sil Park, Niskayuna, NY (US);
Huicong Hong, Niskayuna, NY (US);
Xian-An Cao, Morgantown, WV (US);
Larry Qiang Zeng, Strongsville, OH (US);
Momentive Performance Materials Inc., Waterford, NY (US);
Abstract
A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0.01 cm. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3×10per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.