The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Mar. 04, 2013
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Ayako Kawanishi, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 19/00 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
C30B 19/00 (2013.01); B81C 1/00031 (2013.01); H01L 21/0271 (2013.01); H01L 21/31144 (2013.01); B81C 2201/0149 (2013.01); B81C 2201/0198 (2013.01);
Abstract

According to one embodiment, a pattern forming method includes forming a graphoepitaxy on a substrate, a process of forming a first self-assembly material layer that contains a first segment and a second segment in a depressed portion of the graphoepitaxy, a process of forming a first self-assembly pattern that has a first region containing the first segment, and a second region containing the second segment by performing a phase separation of the first self-assembly material layer, a process of forming a second self-assembly material layer containing a third segment and a fourth segment on a projected portion of the graphoepitaxy, and the first self-assembly pattern, a process of forming a second self-assembly pattern that has a third region containing the third segment, and a fourth region containing the fourth segment by performing a phase separation of the second self-assembly material layer.


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