The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Jul. 24, 2015
Applicant:

Mie Fujitsu Semiconductor Limited, Kuwana, MIE, JP;

Inventors:

Lawrence T. Clark, Phoenix, AZ (US);

David A. Kidd, San Jose, CA (US);

Chao-Wu Chen, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/03 (2006.01); H03K 3/011 (2006.01); G05F 3/26 (2006.01); G05F 3/20 (2006.01);
U.S. Cl.
CPC ...
H03K 3/011 (2013.01); G05F 3/205 (2013.01); G05F 3/262 (2013.01); H03K 3/0315 (2013.01);
Abstract

An integrated circuit device can include at least one oscillator stage having a current mirror circuit comprising first and second mirror transistors of a first conductivity type, and configured to mirror current on two mirror paths, at least one reference transistor of a second conductivity type having a source-drain path coupled to a first of the mirror paths, and a switching circuit coupled to a second of the mirror paths and configured to generate a transition in a stage output signal in response to a stage input signal received from another oscillator stage, wherein the channel lengths of the first and second mirror transistors are larger than that of the at least one reference transistor.


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