The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Feb. 17, 2015
Applicant:
Sandia Corporation, Albuquerque, NM (US);
Inventors:
Arthur J. Fischer, Albuquerque, NM (US);
Jeffrey Y. Tsao, Albuquerque, NM (US);
Jonathan J. Wierer, Jr., Albuquerque, NM (US);
Xiaoyin Xiao, Albuquerque, NM (US);
George T. Wang, Albuquerque, NM (US);
Assignee:
Sandia Corporation, Albuquerque, NM (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01S 5/343 (2006.01); H01L 33/00 (2010.01); B82B 1/00 (2006.01); C25F 3/12 (2006.01); H01L 21/3063 (2006.01); H01L 33/18 (2010.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); B82B 1/00 (2013.01); C25F 3/12 (2013.01); H01L 21/30635 (2013.01); H01L 33/007 (2013.01); H01L 33/18 (2013.01);
Abstract
Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.