The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Oct. 14, 2011
Toshihiko Uto, Settsu, JP;
Takashi Kuchiyama, Settsu, JP;
Daisuke Adachi, Settsu, JP;
Kenji Yamamoto, Settsu, JP;
Toshihiko Uto, Settsu, JP;
Takashi Kuchiyama, Settsu, JP;
Daisuke Adachi, Settsu, JP;
Kenji Yamamoto, Settsu, JP;
KANEKA CORPORATION, Osaka-shi, JP;
Abstract
Disclosed is a method for manufacturing a crystalline silicon-based photoelectric conversion device having a first intrinsic silicon-based layer, a p-type silicon-based layer and a first transparent electroconductive layer, positioned in this order on one surface of a conductive single-crystal silicon substrate, and having a second intrinsic silicon-based layer, an n-type silicon-based layer and a second transparent electroconductive layer, positioned in this order on the other surface of the conductive single-crystal silicon substrate. In the present invention, a heat treatment is carried out after at least one of the transparent electroconductive layers is formed. This heat treatment is carried out at a temperature of less than 200° C. under a hydrogen-containing atmosphere.