The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2016

Filed:

Dec. 21, 2012
Applicant:

Teledyne Scientific & Imaging, Llc, Thousand Oaks, CA (US);

Inventors:

Allan Evans, Woodland Hills, CA (US);

William Tennant, Thousand Oaks, CA (US);

Andrew Hood, Ventura, CA (US);

Assignee:

TELEDYNE SCIENTIFIC & IMAGING, LLC, Thousand Oaks, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 31/109 (2006.01); H01L 31/0352 (2006.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 31/109 (2013.01); H01L 31/03046 (2013.01); H01L 31/035236 (2013.01);
Abstract

A structure comprised of an InAsSb layer adjacent to a GaSb layer, with the adjacent InAsSb and GaSb layers repeating to form a superlattice (SL). The structure is preferably an unstrained SL, wherein the composition of the InAsSb layer is InAsSb; the InAsSblayers are preferably lattice-matched to the GaSb layers. The SL structure is preferably arranged such that the Sb component of the InAsSb layers reduces the strain in the SL structure so that it is less than that found in an InAs/GaSb Type-II Strained Layer Superlattice (SLS). The present SL structure is suitably employed as part of an infrared photodetector.


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