The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jan. 18, 2012
Applicant:
Shigeru Okuuchi, Tokyo, JP;
Inventor:
Shigeru Okuuchi, Tokyo, JP;
Assignee:
SUMCO Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/052 (2014.01); H01L 31/18 (2006.01); H01L 21/302 (2006.01); H01L 31/0236 (2006.01); H01L 31/0216 (2014.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0527 (2013.01); H01L 31/0216 (2013.01); H01L 31/02363 (2013.01); H01L 31/18 (2013.01); H01L 21/0203 (2013.01); Y02E 10/50 (2013.01);
Abstract
A solar cell wafer having a porous layer on a surface of a semiconductor wafer typified by a silicon wafer, which can further reduce reflection loss of light at the surface. A solar cell waferof the present invention has a porous layerhaving a pore diameter of 10 nm or more and 45 nm or less, on at least one surfaceA of a semiconductor wafer, and the layer thickness of the porous layeris more than 50 nm and 450 nm or less.