The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Apr. 12, 2013
Applicant:
Robert Bosch Gmbh, Stuttgart, DE;
Inventors:
Ingo Herrmann, Friolzheim, DE;
Christoph Schelling, Stuttgart, DE;
Assignee:
Robert Bosch GmbH, Stuttgart, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); G01J 5/20 (2006.01); H01L 27/146 (2006.01); H01L 31/103 (2006.01); G01J 5/04 (2006.01); G01J 5/02 (2006.01); H01L 27/144 (2006.01); H01L 31/02 (2006.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035281 (2013.01); G01J 5/023 (2013.01); G01J 5/024 (2013.01); G01J 5/0225 (2013.01); G01J 5/046 (2013.01); G01J 5/20 (2013.01); H01L 27/1443 (2013.01); H01L 27/14649 (2013.01); H01L 31/02005 (2013.01); H01L 31/028 (2013.01); H01L 31/103 (2013.01); H01L 31/1804 (2013.01); Y02E 10/50 (2013.01);
Abstract
An infrared sensor device includes at least one sensor element formed in a semiconductor substrate, an SOI wafer that defines a gap below and around the sensor element, and a suspension device that is configured to suspend the sensor element in the SOI wafer. The sensor element is substantially arranged below the suspension device, thereby achieving a high sensitivity, low thermal capacity, low thermal coupling to the substrate and a high image refresh rate.