The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Oct. 28, 2014
Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;
Kazuue Fujita, Hamamatsu, JP;
Toru Hirohata, Hamamatsu, JP;
Tadataka Edamura, Hamamtsu, JP;
Tatsuo Dougakiuchi, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A quantum cascade detector includes a semiconductor substrate, and an active layer formed by laminating unit laminate structures each having an absorption region with a first barrier layer to a second well layer and a transport region with a third barrier layer to an n-th well layer. A second absorption well layer has a layer thickness ½ or less of that of a first absorption well layer thickest in one period, and a coupling barrier layer has a layer thickness smaller than that of an exit barrier layer thickest in one period. The unit laminate structure has a detection lower level arising from a ground level in the first well layer, a detection upper level generated by coupling an excitation level in the first well layer and a ground level in the second well layer, and a transport level structure for electrons.