The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
May. 10, 2013
Ishiang Shih, Brossard, CA;
Cindy Xing Qiu, Brossard, CA;
Chunong Qiu, Brossard, CA;
Yi-chi Shih, Los Angeles, CA (US);
Ishiang Shih, Brossard, CA;
Cindy Xing Qiu, Brossard, CA;
Chunong Qiu, Brossard, CA;
Yi-Chi Shih, Los Angeles, CA (US);
Other;
Abstract
This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices.