The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jan. 24, 2013
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Tadayoshi Miyamoto, Osaka, JP;
Kazuatsu Ito, Osaka, JP;
Shigeyasu Mori, Osaka, JP;
Mitsunobu Miyamoto, Osaka, JP;
Yasuyuki Ogawa, Osaka, JP;
Makoto Nakazawa, Osaka, JP;
Seiichi Uchida, Osaka, JP;
Takuya Matsuo, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
This semiconductor device (A) includes: a substrate (); a gate electrode () and a first transparent electrode () which are formed on the substrate (); a first insulating layer () formed over the gate electrode () and the first transparent electrode (); an oxide semiconductor layer () formed on the first insulating layer (); source and drain electrodes () electrically connected to the oxide semiconductor layer (); and a second transparent electrode () electrically connected to the drain electrode (). At least a portion of the first transparent electrode () overlaps with the second transparent electrode () with the first insulating layer () interposed between them, and the oxide semiconductor layer () and the second transparent electrode () are formed out of the same oxide film.