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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9276123 B1

PDFFull Text
Date of Patent:
Mar. 01, 2016

Filed:

Aug. 04, 2013

Oxide semiconductor target and oxide semiconductor material, as well as semiconductor device using the same

Applicant:

Hitachi Metals, Ltd., Minato-ku, Tokyo, JP;

Inventors:

Hironori Wakana, Tokyo, JP;

Hiroyuki Uchiyama, Tokyo, JP;

Hideko Fukushima, Tokyo, JP;

Assignee:

HITACHI METALS, LTD., Tokyo, JP;

Attorney:

Miles & Stockbridge P.C.

Primary Examiner:

Calvin Lee

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/28 (2006.01); H01L 29/786 (2006.01); C23C 14/08 (2006.01); H01L 21/02 (2006.01); C23C 14/34 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); C23C 14/086 (2013.01); C23C 14/3414 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 27/3244 (2013.01);
Abstract

There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ΔVth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

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