The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Jan. 25, 2012
Applicant:
Mikihiro Yokozeki, Kanagawa, JP;
Inventor:
Mikihiro Yokozeki, Kanagawa, JP;
Assignee:
JOLED INC., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/78696 (2013.01);
Abstract
Disclosed herein is a thin-film transistor having a gate electrode; a source electrode and a drain electrode which form a source/drain-electrode pair; and a channel layer which is provided between the gate electrode and the source/drain-electrode pair, includes a poly-crystal oxide semiconductor material and has a film thickness smaller than the average diameter of crystal grains of the poly-crystal oxide semiconductor material.