The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Sep. 04, 2013
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Shunsuke Yamada, Osaka, JP;
Toru Hiyoshi, Osaka, JP;
Takeyoshi Masuda, Osaka, JP;
Keiji Wada, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A silicon carbide semiconductor device includes an element region and a guard ring region. A semiconductor element is provided in the element region. The guard ring region surrounds the element region in a plan view and has a first conductivity type. The semiconductor element includes a drift region having a second conductivity type different from the first conductivity type. The guard ring region includes a linear region and a curvature region continuously connected to the linear region. A value obtained by dividing a radius of curvature of an inner circumference portion of the curvature region by a thickness of the drift region is not less than 5 and not more than 10. Accordingly, there can be provided a silicon carbide semiconductor device capable of improving a breakdown voltage while suppressing decrease of on-state current.